TERT-BUTYL-SUBSTITUTED VANADOCENE, (C(5)H(4)CME(3))(2)V - A PRECURSORFOR MOCVD OF PURE VANADIUM CARBIDE

tert-Butyl-substituted vanadocene, (C(5)H(4)CMe(3))(2)V (1), is used a s a precursor in the CVD preparation (740 degrees C under hydrogen at atmospheric pressure on steel substrates) of crystalline VC0.88 thin f ilms, characterized by X-ray diffraction (XRD), scanning electron micr oscopy (SEM), X-ray photoelectron spectroscopy (XPS) and electron prob e microanalysis with wavelength dispersive spectroscopy (EPMA-WDS), wh ich are not contaminated by graphitic carbon or oxygen. 1 was obtained by reaction of (C(5)H(4)CMe(3))Na with [(V2Cl3)(THF)(6)](2)(Zn2Cl6) a nd characterized by X-ray crystal structure analysis [monoclinic, P2(1 )/n; a=6.164(1), b=11.263(2), c=11.842(2) Angstrom, beta=96.31(2)degre es; V=817.2(7) Angstrom(3); Z=2], A possible mechanism for the deposit ion of VC films from 1 is proposed.