RECOMBINATION PROPERTIES OF IMPLANTED GROUP-I, GROUP-III, AND GROUP-VIII IONS AND THERMALLY ANNEALED CDXHG1-XTE CRYSTALS

This paper describes how ion implantation of group-I, -III, and -VIII elements, combined with diffusion thermal annealing, affects the recom bination properties of CdxHg1-xTe with 0.204 less than or equal to x l ess than or equal to 0.3. It is shown that, after implantation and sub sequent annealing in CdxHg1-xTe crystals, in which type inversion n--> p has occurred, recombination via local levels located 25+/-10 meV bel ow the bottom of the conduction band dominates at temperatures below 2 00-150 K. The recombination centers that appear in this case are neutr al and are apparently associated with the formation of vacancy complex es of type (VHgVTe) in the CdxHg1-xTe crystals. (C) 1995 American Inst itute of Physics.