A 2-COLLECTOR, SILICON, N-P-N TENSOTRANSISTOR WITH AN ACCELERATING ELECTRIC-FIELD IN ITS BASE

The spatial distribution of the electric potential and of the concentr ation of nonequilibrium carriers is calculated in the base region of a two-collector tensotransistor with an extended emitter. The optimal t opology is determined for the tensotransistor on the basis of these ca lculations. It is shown that the output signal of the tensotransistor arises from two effects: the transverse deflection of nonequilibrium c arriers and modulation of the injection. The contribution of the latte r increases with increasing width of the emitter n-p junction. (C) 199 5 American Institute of Physics.