The results of an experimental study of the magnitude and sign of the
barrier thermo-emf at a p-n junction subjected to various types of app
lied temperature gradients are presented. The method of calculation is
based on phenomenological equations for the current densities of elec
trons and holes, the equations of continuity for electrons and holes,
and the Poisson equation for the electric field distribution along the
structure. In contrast with the barrier-layer photovoltage, the barri
er thermo-emf can have not only a forward-bias direction, but also a r
everse-bias direction, depending on the position of the temperature gr
adients and the physical parameters of the p-n structure. Experimental
data that confirm both the computed values acid the sign of the barri
er thermo-emf are presented. (C) 1995 American Institute of Physics.