MOLECULAR-BEAM EPITAXY OF CUBIC GAN ON A (001)GAAS SUBSTRATE USING HYDRAZINE

The results of a thermodynamic analysis of the processes by which atom ic and molecular nitrogen, ammonia, and hydrazine interact with a GaAs substrate are presented, These results, which show that hydrazine is an effective source of chemically active nitrogen, are derived from ou r study of the initial stages of molecular-beam epitaxy of the system GaN/CaAs(001) using hydrazine. They indicate that the initial stage of molecular-beam epitaxy of GaN on a substrate of GaAs(001) is characte rized by three-dimensional island formation. The dominant initial crys tallographic orientation of the islands and the direction of their gro wth are preserved over the entire growth period. According to cathodol uminescence data, exciton recombination is the dominant mechanism for light emission at 300 and 77 K. (C) 1995 American Institute of Physics .