THE QUANTUM HALL-EFFECT IN A SAMPLE WITH NONSTANDARD GEOMETRY

Citation
Ba. Aronzon et al., THE QUANTUM HALL-EFFECT IN A SAMPLE WITH NONSTANDARD GEOMETRY, Semiconductors, 29(10), 1995, pp. 952-954
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
29
Issue
10
Year of publication
1995
Pages
952 - 954
Database
ISI
SICI code
1063-7826(1995)29:10<952:TQHIAS>2.0.ZU;2-N
Abstract
The Hall quantization of resistance under conditions where a prespecif ied dissipative current hows through the sample has been studied. A ma ximum in the voltage at the potential contacts in this case is found t o correspond to a plateau of the Hall voltage. (C) 1995 American Insti tute of Physics.