ANOMALIES IN THE STRUCTURAL PERFECTION OF SIC-6H CRYSTALS GROWN BY THE MODIFIED LELY METHOD

Using x-ray diffractometry and topography methods, we have investigate d SiC-6H substrates obtained from crystals grown by the modified Lely method at the Electrotechnical University of St. Petersburg and CREE R esearch (Washington, USA). We show that anomalies in the structural pe rfection of these substrates reflect a considerable difference in the type and distribution of defects that predominate in them. (C) 1995 Am erican Institute of Physics.