DIODE PARAMETER DETERMINATION AS APPLIED TO MOSFETS FOR RADIATION EFFECTS CHARACTERIZATION

An experimental study of the drain-substrate junction controlled by ga te voltage has been carried out on n- MOSFETs. The experimental proced ure to acquire the current-voltage characteristics is described togeth er with a theoretical analysis that leads to extract electrical and st ructural parameters for a description of carrier transport phenomena. The determination of junction parameters is shown to be a powerful met hod for the evaluation of radiation degradations of the performances o f the devices.