DEPTH PROFILE AND STRESS MEASUREMENTS ON IMPLANTED LAYERS

Citation
Ba. Vanbrussel et Jtm. Dehosson, DEPTH PROFILE AND STRESS MEASUREMENTS ON IMPLANTED LAYERS, Radiation effects and defects in solids, 132(3), 1994, pp. 193-201
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
ISSN journal
10420150
Volume
132
Issue
3
Year of publication
1994
Pages
193 - 201
Database
ISI
SICI code
1042-0150(1994)132:3<193:DPASMO>2.0.ZU;2-A
Abstract
The properties of a metal surface can be enhanced by implantation with noble gas ions. Implantation has its effect on the stress state of th e material. In this work, SS304 stainless steel is implanted with Ne+. SS304 bears the property of being easily transformable from the face c entered cubic (fee) phase to the body centered cubic (bcc) phase. Befo re the implantation the SS304 samples were stress free and completely of the fee phase, after the implantation bcc phase material is present and the implanted layer is in a compressive stress state. By using a different approach towards glancing angle X-ray diffraction we were ab le to measure a depth profile of the bcc material and to measure the s tresses in the 0.1 mu m thick implanted layer.