HALL RESISTANCE IN THE HOPPING REGIME - A HALL INSULATOR

Citation
O. Entinwohlman et al., HALL RESISTANCE IN THE HOPPING REGIME - A HALL INSULATOR, Physical review letters, 75(22), 1995, pp. 4094-4097
Citations number
10
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
75
Issue
22
Year of publication
1995
Pages
4094 - 4097
Database
ISI
SICI code
0031-9007(1995)75:22<4094:HRITHR>2.0.ZU;2-0
Abstract
The Hall conductivity and resistivity of strongly localized electrons at low temperatures and small magnetic fields are obtained. The result s depend on whether one uses the conductivity or resistivity tensor to obtain the macroscopic Hall resistivity. In the second case the Hall resistivity always diverges exponentially as T --> 0. However, when th e Hall resistivity is derived from the conductivity, the resulting tem perature dependence is sensitive to the disorder configuration, and th e Hall resistivity may approach a constant value as T --> 0. This is t he Hall insulating behavior. It is argued that for strictly de conditi ons the transport quantity that should be averaged is the resistivity, and this shows no Hall insulating behavior.