HETEROEPITAXY OF BETA-SIC FROM METHYLTRICHLOROSILANE AND METHYLTRIBROMOSILANE ON SI(100) WITHOUT A CARBON BUFFER LAYER

Methyltrichlorosilane and a novel precursor methyltribromosilane have been used for the heteroepitaxial deposition of beta-SiC on Si(100) at a relatively low temperature of 1150-1200 degrees C without any carbo n buffer layer. The low deposition temperature and an improved tempera ture program during the annealing of the substrate for cleaning and su bsequent deposition of the film allowed us to prepare beta-SiC epitaxi al films of high structural quality which is documented by the x-ray d iffraction, Raman scattering spectroscopy and scanning electron micros copy. (C) 1995 American Institute of Physics.