PRODUCTION OF ATOMIC-HYDROGEN IN AL-SIO2-SI SYSTEMS BY VACUUM-ULTRAVIOLET RADIATION

A study of the generation of H-induced defects in the Al-SiO2-Si syste m by vacuum ultraviolet radiation (hv=10 eV) shows that small cross-se ction hole traps in the bulk of the oxide and donor-type states at the Si-SiO2 interface are formed by different reactions paths. In both ca ses the production of atomic H, required for obtaining these defects, only involves neutral species. However, the source of the hydrogen pro ducing the bulk hole traps is located at the Al-SiO2 interface, the so urce for the hydrogen inducing the donor-type interface states at the Si-SiO2 interface. (C) 1995 American Institute of Physics.