NUCLEATION OF HOMOEPITAXIAL FILMS GROWN WITH ION ASSISTANCE ON PT(111)

Authors
ESCH S BOTT M MICHELY T COMSA G
Citation
S. Esch et al., NUCLEATION OF HOMOEPITAXIAL FILMS GROWN WITH ION ASSISTANCE ON PT(111), Applied physics letters, 67(21), 1995, pp. 3209-3211
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
21
Year of publication
1995
Pages
3209 - 3211
Database
ISI
SICI code
0003-6951(1995)67:21<3209:NOHFGW>2.0.ZU;2-A
Abstract
The nucleation of Pt films grown by ion beam assisted deposition on Pt (lll) has been studied by scanning tunneling microscopy. At temperatur es T greater than or equal to 200 K, the simultaneous ion bombardment during vapor phase deposition leads to a substantial increase in the i sland number density caused by nucleation at ion impact induced adatom clusters. This increase is observed even in the higher temperature ra nge where after ion bombardment alone the ion impact induced adatom cl usters are no longer present. (C) 1995 American Institute of Physics.