GROWTH OF SEMIINSULATING GAAS CRYSTALS BY VERTICAL GRADIENT FREEZE TECHNIQUE

Authors
FRANK C HEIN K
Citation
C. Frank et K. Hein, GROWTH OF SEMIINSULATING GAAS CRYSTALS BY VERTICAL GRADIENT FREEZE TECHNIQUE, Crystal research and technology, 30(7), 1995, pp. 897-909
Citations number
23
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
30
Issue
7
Year of publication
1995
Pages
897 - 909
Database
ISI
SICI code
0232-1300(1995)30:7<897:GOSGCB>2.0.ZU;2-L
Abstract
GaAs crystals having dislocation densities of 1-2 . 10(3) cm(-2) were grown using VGF technique. In the grown crystals Si-Ga is the dominant donor and C-As the dominant acceptor. Theoretical and experimental in vestigations have shown the possibilities to influence on the silicon and carbon content in GaAs. Based on these results, semiinsulating pro perties in the crystals could be achieved reproducibly.