IMPROVEMENT IN ELECTRICAL-PROPERTIES OF BURIED SIO2 LAYERS BY HIGH-TEMPERATURE OXIDATION

Authors
MRSTIK BJ MCMARR PJ HUGHES HL ANC MJ KRULL WA
Citation
Bj. Mrstik et al., IMPROVEMENT IN ELECTRICAL-PROPERTIES OF BURIED SIO2 LAYERS BY HIGH-TEMPERATURE OXIDATION, Applied physics letters, 67(22), 1995, pp. 3283-3285
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
22
Year of publication
1995
Pages
3283 - 3285
Database
ISI
SICI code
0003-6951(1995)67:22<3283:IIEOBS>2.0.ZU;2-5
Abstract
The density of defects in the buried oxide of implanted oxide silicon- on-insulator material which cause low resistance paths between the sub strate and top silicon layer has been greatly reduced by high temperat ure oxidation. The mechanism for this is the diffusion of oxygen throu gh the top silicon layer to the buried oxide, where it oxidizes chains of silicon atoms. (C) 1995 American Institute of Physics.