Bj. Mrstik et al., IMPROVEMENT IN ELECTRICAL-PROPERTIES OF BURIED SIO2 LAYERS BY HIGH-TEMPERATURE OXIDATION, Applied physics letters, 67(22), 1995, pp. 3283-3285
The density of defects in the buried oxide of implanted oxide silicon-
on-insulator material which cause low resistance paths between the sub
strate and top silicon layer has been greatly reduced by high temperat
ure oxidation. The mechanism for this is the diffusion of oxygen throu
gh the top silicon layer to the buried oxide, where it oxidizes chains
of silicon atoms. (C) 1995 American Institute of Physics.