THICKNESS PROFILES OF SIO2-FILMS DEPOSITED FROM TETRAETHOXYSILANE O-3PRECURSORS IN ULTRA-HIGH-ASPECT-RATIO CAPILLARIES/

Thickness profiles of silicon dioxide films deposited by ozone-augment ed tetraethoxysilane have been experimentally measured in ultra-high-a spect ratio capillaries. The deposition profiles exhibit a sharp drop in film thickness near the capillary entrance followed by a gradual de crease in thickness along the capillary. A feature-scale model for thi s process has been developed which includes the effect of by-products on the reaction kinetics and transport inside the structure. Simulated deposition profiles agree well with the experimental data, indicating that a trapped by-product inside the capillary inhibits the film-form ing reaction, thus producing the characteristic film profile. (C) 1995 American Institute of Physics.