Rj. Soave et al., THICKNESS PROFILES OF SIO2-FILMS DEPOSITED FROM TETRAETHOXYSILANE O-3PRECURSORS IN ULTRA-HIGH-ASPECT-RATIO CAPILLARIES/, Applied physics letters, 67(22), 1995, pp. 3286-3288
Thickness profiles of silicon dioxide films deposited by ozone-augment
ed tetraethoxysilane have been experimentally measured in ultra-high-a
spect ratio capillaries. The deposition profiles exhibit a sharp drop
in film thickness near the capillary entrance followed by a gradual de
crease in thickness along the capillary. A feature-scale model for thi
s process has been developed which includes the effect of by-products
on the reaction kinetics and transport inside the structure. Simulated
deposition profiles agree well with the experimental data, indicating
that a trapped by-product inside the capillary inhibits the film-form
ing reaction, thus producing the characteristic film profile. (C) 1995
American Institute of Physics.