REACTIVE ION-BEAM ETCHING OF ALUMINUM INDIUM-ANTIMONIDE, GALLIUM INDIUM-ANTIMONIDE HETEROSTRUCTURES IN ELECTRON-CYCLOTRON-RESONANCE METHANEHYDROGEN/NITROGEN/SILICON TETRACHLORIDE DISCHARGES AT ROOM-TEMPERATURE/

Reactive ion beam etching of aluminum indium antimonide, gallium indiu m antimonide heterostructures in electron cyclotron resonance plasma u sing methane/hydrogen/nitrogen/silicon tetrachloride (CH4/H-2/N-2/SiCl 4) mixtures has been performed at room temperature. Due to the ratio o f chlorine to methane, formation of an indium chloride layer on the et ched surface is avoided, thus resulting, in etched surfaces as smooth as the original ones and flat mesa sidewalls. Infrared diodes (2.3 mu m) have been fabricated using this etching technology. (C) 1995 Americ an Institute of Physics.