DELAYED PHOTOCURRENT AFFECTED BY GAMMA-X RESONANCE IN GAAS ALAS TYPE-I SHORT-PERIOD SUPERLATTICES/

Authors
MIMURA H OHTANI N HOSODA M TOMINAGA K WATANABE T TANAKA G FUJIWARA K
Citation
H. Mimura et al., DELAYED PHOTOCURRENT AFFECTED BY GAMMA-X RESONANCE IN GAAS ALAS TYPE-I SHORT-PERIOD SUPERLATTICES/, Applied physics letters, 67(22), 1995, pp. 3292-3294
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
22
Year of publication
1995
Pages
3292 - 3294
Database
ISI
SICI code
0003-6951(1995)67:22<3292:DPABGR>2.0.ZU;2-S
Abstract
Delayed photocurrents were observed in GaAs/AlAs type-I short-period s uperlattices by measuring time-resolved photoresponses under ultrashor t optical pulse excitation. According to the envelope function calcula tions, the X(1) state in AlAs barriers resonates with the Gamma(2) sta te in the adjacent GaAs wells at a bias voltage where the delayed phot ocurrents were conspicuous. These results strongly suggest that the dy namic carrier transport process is significantly influenced by X(1)-Ga mma(2) resonance effects in the superlattices. (C) 1995 American Insti tute of Physics.