MODELING AND DESIGN OF INAS ALSB-RESONANT TUNNELING DIODES/

In this letter we present a simple but effective single band model for the calculation of the current-voltage characteristics in InAs/AlSb d ouble barrier resonant tunneling diodes. We have obtained a very good agreement for the overall characteristics and especially for both peak and valley current densities as compared with previously published da ta. The influence of the doping concentration in the injection layer o n the current density is studied, as well as the influence of the quan tum well width. We discuss a diode design with a view to tunneling dio de oscillators suitable for submillmeter wave mixing. (C) 1995 America n Institute of Physics.