HIGH-RESOLUTION X-RAY-ANALYSIS OF COMPRESSIVELY STRAINED 1.55 MU-M GAINAS ALGAINAS MULTIQUANTUM-WELL STRUCTURES NEAR THE CRITICAL THICKNESS/

Compressively strained InP/GaInAs/AlGaInAs multiquantum well (MQW) las er structures with up to 15 QWs designed for 1.55 mu m emission wavele ngth were grown by metalorganic chemical vapor deposition (MOCVD) on p -type InP(001) substrates. Crystallographic and optical properties are studied using double crystal x-ray diffraction and photoluminescence measurements. The rocking curves of the complicated MQW structure can be perfectly modeled using dynamical diffraction theory. The critical thickness observed for strain relaxation upon growth and laser process ing is found to be in good agreement with that predicted by Matthews a nd Blakeslee [J. Cryst. Growth 27, 118 (1974)] taking into account the MQW structure and the cap layer. (C) 1995 American Institute of Physi cs.