A 36-element monolithic grid amplifier has been fabricated. The peak g
ain is 5 dB at 40.8 GHz with a 3-dB bandwidth of 1.4 GHz. The active e
lements are pairs of heterojunction-bipolar-transistor's(HBT's). The i
ndividual transistors in the grid have a maximum oscillation frequency
, f(max), of 100 GHz, The grid includes base stabilizing capacitors wh
ich result in a highly stable grid. This is the first report of a succ
essful monolithic grid amplifier.