FLIP-CHIP PLANAR GAINAS INP P-I-N PHOTODIODES - FABRICATION AND CHARACTERISTICS/

New flip-chip planar GaInAs/InP p-i-n photodiodes have been fabricated as an array, We describe the structure of the photodiode, the design of a microlens, the fabrication processes, characteristics, and the op tical fiber-coupled modules, This photodiode satisfied the requirement s for a small junction capacitance and low dark current, good optical fiber coupling, and easy fabrication, We obtained a low dark current w ith good reproducibility by using two layer polyimide and SiN passivat ion films, A microlens with a 50 mu m phi to 120 mu m phi aperture cou ld easily be fabricated with an InP-substrate. By electroplating, flip -chip metal bumps were directly formed on the active region of the pho todiode for the first time.