ON THE ELECTRONIC-PROPERTIES OF ICOSAHEDRAL QUASI-CRYSTALS

Citation
H. Werheit et al., ON THE ELECTRONIC-PROPERTIES OF ICOSAHEDRAL QUASI-CRYSTALS, Solid state communications, 97(2), 1996, pp. 103-107
Citations number
32
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
97
Issue
2
Year of publication
1996
Pages
103 - 107
Database
ISI
SICI code
0038-1098(1996)97:2<103:OTEOIQ>2.0.ZU;2-J
Abstract
Boron, aluminium and gallium belong to the same group of the periodic system of elements and are therefore expected to generate similar bond s in specific solid state structures. Obviously such similarities lead to the icosahedra in boron-rich solids and in Al-based quasicrystals. Since the electronic band structures of the boron-rich solids are dec isively determined by electron-phonon interactions in the B-12 icosahe dra, related characteristics in the band structures of quasicrystals w ith structures based on Al-12 icosahedra are expected. Close similarit ies of optical properties of beta-rhombohedral boron interstitially do ped with transition metals and some icosahedral quasicrystals support this expectation Hence for the interpretation of the electronic proper ties of icosahedral quasicrystals a semiconductor concept similar to t hat in boron-rich solids is proposed.