PHOTOLUMINESCENCE OF EXCITONS BOUND TO THE RADIATION-DAMAGE DEFECTS B-41 (1.1509 EV) IN SILICON

Using photoluminescence spectroscopy in magnetic fields up to 12 T, we show that the very shallow isoelectronic centers B-41 (1.15090 eV pri ncipal no phonon line) created by a neutron irradiation in a phosphoru s-doped silicon grown in a hydrogen atmosphere have the C-3v symmetry. We explain the structure of the energy levels of the excitons bound t o these centers and determine their lifetime and g-factors of the boun d particles.