MICROCRYSTALLINE SIC FILMS GROWN BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURES

The characteristics of microcrystalline silicon carbide (mu c-SiC) fil ms deposited using an electron cyclotron resonance chemical vapor depo sition system at low temperatures have been investigated. The effect o f microwave (MW) power on the SiC crystallinity is studied. According to the results of Fourier transform infrared absorption spectra, plan- view transmission electron microscopy, and the plasmon loss peaks in X -ray photoelectron spectroscopy, Si-C bonds form when the MW power is above 500 W for deposition at 500 degrees C. The SiC crystallinity imp roves monotonically with MW power. The amount of incorporated carbon a toms in the grown films increases with MW power up to the concentratio n of 50% at 1500 W. The dependence of the surface morphology and the m ean roughness of the films on MW power is examined using the contact m ode atomic force microscopy.