FORMATION MECHANISM OF P-TYPE SURFACE CONDUCTIVE LAYER ON DEPOSITED DIAMOND FILMS

Citation
Rs. Gi et al., FORMATION MECHANISM OF P-TYPE SURFACE CONDUCTIVE LAYER ON DEPOSITED DIAMOND FILMS, JPN J A P 1, 34(10), 1995, pp. 5550-5555
Citations number
17
Categorie Soggetti
Physics, Applied
Volume
34
Issue
10
Year of publication
1995
Pages
5550 - 5555
Database
ISI
SICI code
Abstract
A model of the formation of a p-type surface conductive layer on depos ited diamond films is proposed. According to the model, the ionization of acid in water produces oxonium ion (H3O+) which reacts with hydrog en on diamond films and causes the creation of holes in diamond films. The model also explains the disappearance of the p-type surface condu ctive layer by the action of alkaline substances. The experimental res ults concerning the change in electrical resistance at the surface of diamond films can be explained using the proposed model.