GAS IDENTIFICATION BY A SINGLE GAS SENSOR USING POROUS SILICON AS THESENSITIVE MATERIAL

Authors
MOTOHASHI A KAWAKAMI M AOYAGI H KINOSHITA A SATOU A
Citation
A. Motohashi et al., GAS IDENTIFICATION BY A SINGLE GAS SENSOR USING POROUS SILICON AS THESENSITIVE MATERIAL, JPN J A P 1, 34(10), 1995, pp. 5840-5843
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
34
Issue
10
Year of publication
1995
Pages
5840 - 5843
Database
ISI
SICI code
Abstract
The peak frequency of the dielectric loss angle of gas molecules adsor bed in a porous silicon gas sensor having a 2.4 nm pore radius is foun d to vary inversely proportional to the third power of the gas molecul ar radius. Peak frequency is extremely sensitive to the pore radius, b ecoming about one order of magnitude higher for a pore radius of 1 nm. The temperature dependence of the peak frequency in the range of 0 to 25 degrees C mas also determined.