STIMULATED-EMISSION BY CURRENT INJECTION FROM AN ALGAN GAN/GAINN QUANTUM-WELL DEVICE/

Authors
AKASAKI I AMANO H SOTA S SAKAI H TANAKA T KOIKE M
Citation
I. Akasaki et al., STIMULATED-EMISSION BY CURRENT INJECTION FROM AN ALGAN GAN/GAINN QUANTUM-WELL DEVICE/, JPN J A P 2, 34(11B), 1995, pp. 1517-1519
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Issue
11B
Year of publication
1995
Pages
1517 - 1519
Database
ISI
SICI code
Abstract
Quantum well structures composed of GaInN well and GaN barrier were fa bricated. Room-temperature stimulated emission by pulsed current injec tion is observed from group III nitride using the very thin active lay er, for the first time.