(112)-ORIENTED GROWTH OF CUINSE2 ON (001) MO SINGLE-CRYSTAL SUBSTRATES

CuInSe2 depositions on (001) Mo single-crystal substrates were achieve d by the SetCH(3))(2)-halogen transport method and the crystallinity o f the layers were characterized by reflection high-energy electron dif fraction. On the {001} Mo substrates, (001) CuInSe2 was not obtained; CuInSe2 deposited on (001) Mo was. composed of four sets of (112)-orie nted crystallites which were rotated every 90 degrees about the substr ate surface normal. To explain the appearance of the (112) plane, a mi nimum lattice-mismatch criterion taking into consideration the fact th at Mo has a bce structure was proposed. To obtain Debye-Scherrer-ring- free CuInSe2 films. introducing Br-2 to transport In and Cu before int roducing Se(CH3)(2) was essential.