LASING CHARACTERISTICS OF INGAP INGAALP VISIBLE LASERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION WITH TERTIARYBUTYLPHOSPHINE (TBP)/

The first lasing operation was realized for InGaAlP visible lasers gro wn by metal organic chemical vapor deposition (MOCVD) with TBP which i s a liquid organometallic source. a safer alternative to phosphine. A threshold current density was 1.3 kA/cm(2) with pulse operation was ob tained for broad area lasers at 77 K. The threshold current density wa s observed to be extremely sensitive to the temperature even at low te mperature region, which is considered to be caused by a higher non-rad iative recombination rate in the cladding layers.