InGaMgO4 and InGaZnO4 crystals with the YbFe2O4 layered structure have
been found to be transparent conductive oxides, The band gaps of thes
e crystals were wider than that of In2O3. Conductivity was induced by
doping with electrons through introduction of oxygen vacancies. Mobili
ty carrier density and conductivity of sintered bodies of InGaMgO4 wer
e 2 cm(2)/V . s, 1 x 10(18)/cm(3) and 0.5 S/cm. respectively. Those of
InCaZnO4 were 20 cm(2)/V . s, 4 x 10(19)/cm(3) and 120 S/cm. A promis
ing method to improve the conductivity to a value sufficient for pract
ical use is discussed.