POROUS SILICON - THEORETICAL-STUDIES

Authors
Citation
Gc. John et Va. Singh, POROUS SILICON - THEORETICAL-STUDIES, Physics reports, 263(2), 1995, pp. 94-151
Citations number
180
Categorie Soggetti
Physics
Journal title
ISSN journal
03701573
Volume
263
Issue
2
Year of publication
1995
Pages
94 - 151
Database
ISI
SICI code
0370-1573(1995)263:2<94:PS-T>2.0.ZU;2-4
Abstract
Porous silicon has attracted considerable scientific interest ever sin ce the recent discovery of visible photoluminescence. We present a rev iew of the theoretical work done on this material, We describe the cla ssical theories and computer simulations of the growth of this brittle , spongy structure. The electronic structure calculations based on fir st principles local density approximation as well as semi-empirical me thodologies are outlined. Phenomenological models for photoluminescenc e, its broad lineshape, decay and temperature dependence and excitonic effects on optical behavior are reviewed. Rudimentary theories of ele ctroluminescence, transport and quantum efficiency are also described. A unified, consistent theoretical framework appears to be a distant g oal. Broad suggestions for further theoretical work are outlined.