Dh. Cobden et Ba. Muzykantskii, FINITE-TEMPERATURE FERMI-EDGE SINGULARITY IN TUNNELING STUDIED USING RANDOM TELEGRAPH SIGNALS, Physical review letters, 75(23), 1995, pp. 4274-4277
We show that random telegraph signals in metal-oxide-silicon transisto
rs at millikelvin temperatures provide a powerful means of investigati
ng tunneling between a two-dimensional electron gas and a single defec
t state. The tunneling rate shows a peak when the defect level lines u
p with the Fermi energy, in excellent agreement with theory of the Fer
mi-edge singularity at Finite temperature, This theory also indicates
that defect levels are the origin of the dissipative two-state systems
observed previously in similar devices.