PREPARATION OF LEAD MAGNESIUM NIOBATE TITANATE THIN-FILMS BY CHEMICAL-VAPOR-DEPOSITION

Authors
TAKESHIMA Y SHIRATSUYU K TAKAGI H TOMONO K
Citation
Y. Takeshima et al., PREPARATION OF LEAD MAGNESIUM NIOBATE TITANATE THIN-FILMS BY CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 34(9B), 1995, pp. 5083-5085
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
34
Issue
9B
Year of publication
1995
Pages
5083 - 5085
Database
ISI
SICI code
Abstract
Lead magnesium niobate titanate (PMN-PT) thin films were prepared on P t-coated magnesium oxide single-crystal substrate (Pt(100)/MgO(100)) a nd Pt- and Ti-coated oxidized Si wafer (Pt(111)/Ti/SiO2/Si(100)) at 68 0-780 degrees C by metalorganic chemical vapor deposition (MOCVD). The PMN-PT thin films comprising perovskite structure as a main phase wer e obtained in the composition of Ti/(Mg+Nb+Ti)greater than or equal to 25 mol%. Their room-temperature dielectric constant was 1000-1500 mea sured at 100 mV and 1 kHz.