PHYSICAL-PROPERTIES OF BI4TI3O12 FILMS GROWN ON SI(100) WAFERS

Bismuth titanate (Bi4Ti3O12) films were prepared on Si(100) wafers by rf planar magnetron sputtering using a target of Bi2TiO5 ceramic. C-ax is-oriented Bi4Ti3O12 films were grown on Si(100) at a law substrate t emperature of 550 degrees C. However, these films did not exhibit ferr oelectricity, and the dielectric constant epsilon(r) and dissipation f actor tan delta were about 156 and 0.032, respectively. The dielectric constant was reduced with decreasing film thickness. This behavior wa s assuming supposing a low-dielectric-constant interface layer. These films showeded the dielectric breakdown field of about 21 kV/cm.