PREPARATION OF BISMUTH TITANATE THIN-FILMS BY LASER-ABLATION

Ferroelectric bismuth titanate thin films have been prepared on Si sub strates at low temperature by the laser ablation method using an ArF l aser. Dependences of crystallographic property of the film on substrat e temperature, O-2 gas pressure, laser repetition frequency and anneal ing temperature are presented. The preferentially c-axis-oriented film s have been obtained on Si substrates at a substrate temperature of 40 0 degrees C with annealing at 700 degrees C, and an Pt substrates at a low substrate temperature of 450 degrees C.