MEASUREMENT OF PIEZOELECTRIC CONSTANT OF ZNO THIN-FILM ON SI MICROSTRUCTURE

The piezoelectric constant of a zinc oxide thin film on a silicon fixe d beam was evaluated by a new method using a metal bar (Davies' bar) a nd a laser interferometer. The beam was fabricated by silicon micromac hining techniques, and the ZnO film was deposited on it by rf sputteri ng. The film attached to the end of the Davies' bar was accelerated by striking the other end of the bar with a projectile, and the piezoele ctric constant of the film was calculated from the strain and the elec tric charge. A reasonable value of epsilon(31)=0.43 C/m(2) was obtaine d for the test specimen.