PROPERTIES OF FERROELECTRIC PB(ZR,TI)O-3 THIN-FILMS OIL TISI2 SI SUBSTRATES/

A titanium disilicide (TiSi2) layer was prepared on Si wafers by Ti ev aporation on Si in vacuum followed by heat treatment at 800 degrees C. The sheet electrical resistance of the TiSi2 layer was estimated to b e 1.3 Ohm/square at room temperature. Ferroelectric Pb(Zr, Ti)O-3 thin films was then fabricated on TiSi2/Si by ''the spin-coating pyrolytic process'', here and throughout using Pb, Zr and Ti naphthenates. The remanent polarization and coercive field of the PZT film were estimate d to be about 0.4 mu C/cm(2) and 97 kV/cm, respectively. The potential of the TiSi2 layer as electrodes for capacitors in a VLSI was demonst rated.