A 5-10 GHZ 15-W GAAS-MESFET AMPLIFIER WITH FLAT GAIN AND POWER RESPONSES

A 5-10 GHz 15-W GaAs MESFET amplifier has been developed, It utilizes a multisection maximally flat impedance transformer whose length is de signed to become a quarter wavelength at the highest frequency of the design band to achieve hat gain and flat power responses over a wide b andwidth, With the use of this transformer, the amplifier has achieved a linear gain of 9 +/- 1 dB, a P1 dB of 41.8 +/- 1 dBm, and a power-a dded efficiency of 27.5 +/- 7.5% over 5-10 GHz, which demonstrate the highest power-bandwidth product ever achieved by high-power amplifiers using GaAs MESFET's, PHEMT's or HBT's.