A NEW METHOD FOR STUDYING THE INFLUENCE OF THERMAL-TREATMENT ON OCCUPANCY PERCENTAGES OF OXYGEN-ATOMS IN THE (CZOCHRALSKI) SILICON LATTICE

Authors
ERRAMLI H MISDAQ MA ELASSALI R CHARIK R BLONDIAUX G
Citation
H. Erramli et al., A NEW METHOD FOR STUDYING THE INFLUENCE OF THERMAL-TREATMENT ON OCCUPANCY PERCENTAGES OF OXYGEN-ATOMS IN THE (CZOCHRALSKI) SILICON LATTICE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 103(3), 1995, pp. 347-350
Citations number
14
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
103
Issue
3
Year of publication
1995
Pages
347 - 350
Database
ISI
SICI code
0168-583X(1995)103:3<347:ANMFST>2.0.ZU;2-J
Abstract
Occupancy percentages of oxygen atoms at trace levels in the Czochrals ki silicon lattice have been determined by irradiating the crystal wit h a 3.1 MeV He-3 beam and exploiting ratios of channeled to random yie lds for the [100], [110] and [111] directions. The O-16 (He-3, p) F-18 nuclear reaction was used and the F-18 yield was measured by direct g amma-ray spectrometry. The influence of thermal treatments on oxygen a tom occupancies of interstitial sites has been investigated by analysi ng virgin and thermally treated (under a nitrogen atmosphere) silicon samples.