SYNTHESIS AND CHARACTERIZATION OF A NAPHTHOQUINONEDIAZIDE POSITIVE PHOTORESIST DERIVED FROM BIS(HYDROXYMETHYL)PHENOL

A new photosensitive naphthoquinonediazide (NQD) was Synthesized from 2,6-bis(hydroxymethyl)-3,4-dimethylphenol and toluene diisocyante. NQD was identified by using IR, NMR and elemental analyses. Photobleachab le characteristics were evaluated by UV spectrophotometry. Application s of the NQD on the photolithography as a positive working photoresist were investigated. The aqueous solution of NQD, novolak, cellosolve a cetate, and DMF was used as a photosensitive material. It was found th at NQD synthesized in this investigation can be used as an effective c omponent in a positive photoresist. Optimal conditions of the UV dose, coating thickness, and development of the resist system were estimate d. Resolution of the positive resist was evaluated by SEM technique. E ffects of UV dose, exposure time, development time, and exposure UV wa ve length on the sensitivity and resolution of the photoresist were in vestigated.