AN INVESTIGATION OF THE DIFFUSION AND ELECTROMIGRATION LIMITED GROWTH-MECHANISM OF INP

Authors
FAREED RSQ DHANASEKARAN R
Citation
Rsq. Fareed et R. Dhanasekaran, AN INVESTIGATION OF THE DIFFUSION AND ELECTROMIGRATION LIMITED GROWTH-MECHANISM OF INP, Materials science & engineering. B, Solid-state materials for advanced technology, 34(2-3), 1995, pp. 152-158
Citations number
23
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
34
Issue
2-3
Year of publication
1995
Pages
152 - 158
Database
ISI
SICI code
0921-5107(1995)34:2-3<152:AIOTDA>2.0.ZU;2-3
Abstract
In an electroepitaxial system, growth is carried out and sustained by passing electric current through substrate-solution interface in an is othermal condition. In the present study, investigations have been car ried out to understand the growth mechanism of InP using a computer si mulation technique. Profiles of P in an In-rich melt have been simulat ed under various conditions. Growth/dissolution rates and thicknesses of the epilayers have been calculated, and the results are discussed i n detail.