ELECTRON LOCALIZATION IN SB-DOPED SI SIGE SUPERLATTICES/

Authors
DIETL T JAROSZYNSKI J SAWICKI M GLOD P WROBEL J STOGER G BRUNTHALER G BAUER G SCHAFFLER F
Citation
T. Dietl et al., ELECTRON LOCALIZATION IN SB-DOPED SI SIGE SUPERLATTICES/, Acta Physica Polonica. A, 88(4), 1995, pp. 699-702
Citations number
21
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
88
Issue
4
Year of publication
1995
Pages
699 - 702
Database
ISI
SICI code
0587-4246(1995)88:4<699:ELISSS>2.0.ZU;2-C
Abstract
Millikelvin studies of in-plane magnetoconductance in short period Si/ Ge:Sb superlattices have been carried out in order to examine the effe ct of anisotropy on quantum localization. The field-induced metal-to-i nsulator transition has been observed, indicating the existence of ext ended states. This suggests that despite anisotropy as large as D-para llel to/D-perpendicular to approximate to 10(3) the system behaves as 3D in respect of localization by disorder.