I. Gorczyca et al., CALCULATIONS OF NATIVE DEFECTS AND IMPURITIES IN CUBIC GAN INCLUDING HIGH-PRESSURE EFFECTS, Acta Physica Polonica. A, 88(4), 1995, pp. 723-726
Using the Green-function matrix technique based on the linear muffin-t
in orbital method in the atomic-spheres approximation we perform self-
consistent calculations of the electronic structure for native defects
and impurities in cubic GaN. Native defects as N and Ga vacancies and
antisites and substitutional impurities: Zn, C and Ge in different ch
arge states are investigated. Resulting positions of the defect levels
are compared with tight-binding and pseudopotential calculations. Hig
h pressure behavior is also studied in comparison with some other theo
retical and experimental data.