MEGAGAUSS CYCLOTRON-RESONANCE AND QUANTUM HALL-EFFECT OF 2D ELECTRON-GAS IN HGCDMNTE

Two-dimensional electron gas adjacent to a grain boundary in bicrystal of narrow-gap semiconductor p- Hg0.79Cd0.19Mn0.02Te has been studied under ultra strong impulse magnetic fields (up to 140 T). Both cyclotr on resonance and quantum Hall effect are measured for the same samples . The values of tile resonance fields point to strong nonparabolicity. A broadening of the line is interpreted in terms of an intersubband m ixing that occurs for tile upper Landau level. A steep increase in the linewidth in the field range 20-30 T, which coincides with a strong d ecrease in the Hall resistance is assigned to the field-induced metal- insulator transition in our system.