INTERFACIAL REACTIONS BETWEEN THIN-FILMS OF ZINC AND (100)INP

Citation
E. Kaminska et al., INTERFACIAL REACTIONS BETWEEN THIN-FILMS OF ZINC AND (100)INP, Acta Physica Polonica. A, 88(4), 1995, pp. 771-774
Citations number
3
Categorie Soggetti
Physics
Journal title
ISSN journal
05874246
Volume
88
Issue
4
Year of publication
1995
Pages
771 - 774
Database
ISI
SICI code
0587-4246(1995)88:4<771:IRBTOZ>2.0.ZU;2-R
Abstract
The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and tr ansmission electron microscopy. Zn was found to penetrate the native o xide on InP surface during deposition and to form an ohmic contact whe n deposited on highly doped n-type InP. Heat treatment causes the form ation of Zn3P2 phase lattice matched to InP.