The effects of interaction between thin films of Zn and (100)InP were
studied with secondary ion mass spectrometry, X-ray diffraction and tr
ansmission electron microscopy. Zn was found to penetrate the native o
xide on InP surface during deposition and to form an ohmic contact whe
n deposited on highly doped n-type InP. Heat treatment causes the form
ation of Zn3P2 phase lattice matched to InP.