WIGNER CRYSTALLIZATION IN INGAAS INP HETEROSTRUCTURES WITH A STRONG DISORDER/

Authors
KOVACS G REMENYI G GOMBOS G SAVELEV IG KRESHCHUK AM HEGMAN N PODOR B
Citation
G. Kovacs et al., WIGNER CRYSTALLIZATION IN INGAAS INP HETEROSTRUCTURES WITH A STRONG DISORDER/, Acta Physica Polonica. A, 88(4), 1995, pp. 783-786
Citations number
8
Categorie Soggetti
Physics
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
88
Issue
4
Year of publication
1995
Pages
783 - 786
Database
ISI
SICI code
0587-4246(1995)88:4<783:WCIIIH>2.0.ZU;2-S
Abstract
Non-linear current-voltage characteristics were observed in the range of filling factors of 0.3 less than or equal to v less than or equal t o 0.4 in a two-dimensional electron system in InGaAs/InP heterostructu res with a strong disorder. The observations are explained qualitative ly in terms of magnetic field induced localization and Wigner solidifi cation.