NONOHMIC CONDUCTIVITY OF HIGH-RESISTIVITY CDTE

Conductivity measurements were carried out at room temperature on samp les of nominally undoped Bridgman bulk crystals and MBE-grown layers o f CdTe. The samples were equipped with indium contacts which made it p ossible to determine the voltage distribution along the path of the cu rrent flow. The results show that for both types of CdTe almost all of the applied voltage drops in the vicinity of the positively biased co ntact. The resistance of the samples was shown not to depend on the di stance between the pads. The results agree with predictions of model o f current injection into semiconductors with deep traps.