ANNEALING OF SILICON STRIP DETECTORS AFTER IRRADIATION

Authors
HAUFFE J EYRICH W KIRSCH M MOOSBURGER M STINZING F
Citation
J. Hauffe et al., ANNEALING OF SILICON STRIP DETECTORS AFTER IRRADIATION, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 366(1), 1995, pp. 79-84
Citations number
23
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
366
Issue
1
Year of publication
1995
Pages
79 - 84
Database
ISI
SICI code
0168-9002(1995)366:1<79:AOSSDA>2.0.ZU;2-E
Abstract
We tested a simple annealing process of different single sided silicon strip detectors after irradiation in various experimental environment s.