BARUO3 THIN-FILMS PREPARED BY PULSED-LASER DEPOSITION

High electrical conductive BaRuO3 thin films with (110) perovskite ori entation have been successfully fabricated on Si(100) substrates by pu lsed ArF excimer laser deposition and post-annealing. The resistivity of the films at room temperature is in the range of 10(-2)-10(-3) Ohm cm. Auger electron spectroscopy (AES) measurement shows that the compo sitions uniformly distributed throughout the film. Rutherford backscat tering spectroscopy (RES) analysis indicates that the chemical stoichi ometric ratio is well consistent with the ideal one as in BaRuO3.